Cree Introduces Breakthrough GaN-Based Solid-State Amplifier Platform

　　Cree, Inc. (Nasdaq: CREE) announces the launch of a new Ku-band 40V, 0.25-micron GaN-on-SiC bare die product family with revolutionary power and bandwidth performance. This innovative product family enables solid-state amplifiers to replace traveling wave tubes (TWTs), thereby improving efficiency and reliability.

　　"Compared to GaAs transistors in the same frequency range, Cree's 0.25-micron GaN HEMT bare die product family offers more significant gain, efficiency, and power density," said Tom Dekker, director of RF sales and marketing at Cree. "Higher gain enables more efficient combined power solutions, thereby enhancing the performance of solid-state power amplifiers in C-band, X-band, and Ku-band."

　　Key market applications include marine radar, medical imaging, industrial, and satellite communications. Compared to GaAs transistors, solid-state amplifiers offer higher reliability, lower cost, and superior efficiency, and can reduce the size of power amplifiers and power supplies. The high efficiency of GaN HEMT power amplifiers effectively reduces the power consumption of transmitters.

　　科锐无线射频业务发展经理 Ray Pengelly 表示：“科锐0.25微米GaN HEMT产品拥有突破性的性能，效率和带宽的显著提高实现了GaAs晶体管所不能达到的晶体管性能水平。例如，开关模式的高功率放大器（HPA）能够在微波频率段提供超过80%的功率附加效率。在功率超过10W时，GaN HEMT HPA 的瞬时带宽可达6至18GHz。0.25微米 GaN 产品所提供的卓越性能使得系统工程师能够重新设计 GaAs 晶体管和行波管。”

　　在40V 漏极电压和Ku 波段工作频率范围内，全新 GaN HEMT 裸芯片产品 CGHV1J006D、CGHV1J025D 以及 CGHV1J070D 的额定输出功率分别为6W、25W 和70W。

　　新型碳化硅衬底氮化镓裸芯片产品系列采用科锐专利技术，同时可扩展性的大信号器件模型能够与安捷伦公司的 Advanced Design System 以及 AWR 公司的 Microwave Office 模拟平台相兼容，因此无线射频设计工程师能够准确地模拟先进的射频放大器电路，从而显著缩短设计周期并实现更高微波频率。0.25微米碳化硅衬底氮化镓 HEMT 工艺具有业界领先的可靠性，并能够在 40V 的漏极电压下工作。当通道温度高达225 摄氏度时，平均无故障运行时间超过一百万小时。

　　如欲了解更多科锐全新0.25微米碳化硅衬底氮化镓 HEMT 裸芯片系列产品详情，敬请访问：www.cree.com/rf 。

About Cree (CREE)

　　Cree was founded in 1987 and is a publicly listed company in the United States (NASDAQ: CREE in 1993). It is a renowned manufacturer and industry leader that integrates global LED epitaxy, chips, packaging, LED lighting solutions, compound semiconductor materials, power devices, and RF. Cree's LED lighting products benefit from its unique material technologies in gallium nitride (GaN) and silicon carbide (SiC), as well as its advanced white-light technology. With more than 1,300 U.S. patents, more than 2,900 international patents, and nearly 390 Chinese patents (including granted and pending patents), Cree's LED products remain at the world's leading level. Cree's lighting-grade high-power LEDs feature high luminous efficacy, stable color points, and long lifespan. While providing customers with high-quality and highly reliable light-emitting device products, Cree also offers complete LED lighting solutions. Cree's silicon carbide MOSFET switches feature low on-resistance, stable temperature coefficient, low leakage current, and short switching time. Cree's silicon carbide Schottky power diodes feature zero reverse recovery current. These characteristics make Cree's silicon carbide power devices particularly suitable for power electronic systems requiring high frequency, high efficiency, high power density, and high reliability.